Fabrication and Characteristics of AIInN/A1N/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric

• 来源期刊: 中国物理快报(英文版)
• 年，卷（期）: 2010,（12）
• 页码范围: 199-202
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/27/12/128501

摘要

Al0.85In0.15N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOS-HEMTs)employing a 3-nm ultra-thin atomic-layer deposited(ALD)Al2O3 gate dielectric layer are reported.Devices with 0.6μm gate lengths exhibit an improved maximum drain current density of 1227mA/mm at a gate bias of 3 V,a peak transconductance of 328 mS/mm,a cutoff frequency fT of 16 GHz,a maximum frequency of oscillation fmax of45 GHz,as well as significant gate leakage suppression in both reverse and forward directions,compared with the conventional Al0.85In0.15N/AlN/GaN HEMT.Negligible C-V hysteresis,together with a smaller pinch-off voltage shift,is observed,demonstrating few bulk traps in the dielectric and high quality of the Al2O3/AlInN interface.It is most notable that not only the transconductance profile of the MOS-HEMT is almost the same as that of the conventional HEMT with a negative shift,but also the peak transconductance of the MOS-HEMT is increased slightly.It is an exciting improvement in the transconductance performance.