Influences of a Side-Coupled Triple Quantum Dot on Kondo Transport Through a Quantum Dot

• 来源期刊: 理论物理通讯(英文版)
• 学科: 工学
• 关键词: 耦合量子点 侧面耦合 电导性能 量子点结构 运输 格林函数方法 结构系统 耦合结构
• 年，卷（期）: 2010,（11）
• 所属期刊栏目: Condensed Matter： Electronic Structure, Electrical
• 页码范围: 925-932
• 页数: 8页
• 分类号: TB383 TN245
• 语种: 英文

摘要

Kondo transport properties through a Kondo-type quantum dot (QD) with a side-coupled triple-QDstructure are systematically investigated by using the non-equilibrium Green's function method.We firstly derive theformulae of the current, the linear conductance, the transmission coefficient, and the local density of states.Then we carryout the analytical and numerical studies and some universal conductance properties are obtained.It is shown that thenumber of the conductance valleys is intrinsically determined by the side-coupled QDs and at most equal to the numberof the QDs included in the side-coupled structure in the asymmetric limit.In the process of forming the conductancevalleys, the side-coupled QD system plays the dominant role while the couplings between the Kondo-type QD and theside-coupled structure play the subsidiary and indispensable roles.To testify the validity of the universal conductanceproperties, another different kinds of side-coupled triple-QD structures are considered.It should be emphasized thatthese universal properties are applicable in understanding this kind of systems with arbitrary many-QD side structures.