High power, longevity gallium arsenide photoconductive semiconductor switches

• 来源期刊: 科学通报(英文版)
• 学科: 工学
• 关键词: 砷化镓材料 光电开关 半导体开关 高功率 长寿命 砷化镓半导体 机械结构设计 脉冲持续时间
• 年，卷（期）: 2010,（13）
• 所属期刊栏目: ARTICLES
• 页码范围: 1331-1337
• 页数: 7页
• 分类号: TN201 TM564
• 语种: 英文

摘要

A GaAs Photoconductive Semiconductor Switch (PCSS) with a 3-mm gap between the two opposed contact electrodes was developed with carefully chosen GaAs material, mechanical structure design, contact fabrication techniques and its insulation protection. It is charged by a pulse power supply under a bias of 15 kV, illuminated by laser pulses of 1064 nm in wavelength, 56.12 μJ in optical energy per shot and 1 kHz pulse repetition rate (PRR). The GaAs PCSS can last for more than 3.6×106 shots and produce output ...