Three-Dimensional Finite Element Analysis of Phase Change Memory Cell with Thin TiO2 Film

• 作者: 凌云 刘燕 宋志棠 封松林
• 来源期刊: 中国物理快报(英文版)
• 学科: 工学
• 关键词: 三维有限元分析 相变存储器 TiO2薄膜 存储单元 二氧化钛薄膜 编程能力 PCM SiN薄膜
• 年，卷（期）: 2010,（3）
• 页码范围: 316-319
• 页数: 4页
• 分类号: TN912.3 TQ336.1
• 语种: 英文

摘要

A thin TiO2 layer inserted in a phase change memory (PCM) cell to form a deep sub-micro bottom electrode (DBE) is proposed and its electro-thermal characteristics are investigated with the three-dimensional finite element analysis. Compared with the conventional PCM cell with a SiN stop layer, the reset threshold current of the PCM cell with the TiO2 layer is reduced from 1.8 mA to 1.2 mA and the ratio of the amorphous resistance and crystalline resistive increases from 65 to 100. The optimum thickness of the TiO2 layer and the optimum height of DBE are 10nm and 200nm, respectively. Therefore, the PCM cell with the TiO2 layer can decrease the programming power consumption and increase heating efficiency. The TiO2 film is a better candidate for the SiN film in the PCM cell structure to prepare DBE and to reduce programming power in the reset operation.