Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

• 作者: G. Singh K. S. Yadav Viranjay M. Srivastava
• 来源期刊: 通讯、网络与系统学国际期刊(英文)
• 学科: 医学
• 关键词: Capacitance-Frequency CURVE CAPACITANCE-VOLTAGE CURVE DP4T SWITCH LCR Meter MOS Device Radio FREQUENCY RF SWITCH Testing VEE PRO VLSI
• 年，卷（期）: 2011,（9）
• 页码范围: 590-600
• 页数: 11页
• 分类号: R73

摘要

To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.