Study on the structural, electrical and optical properties of AI-F co-doped ZnO thin films prepared by RF magnetron sputtering

• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2011,（1）
• 页码范围: 45-48
• 页数: 4页
• 语种: 英文
• DOI: 10.1007/sl1801-011-9266-0

摘要

Al and F co-doped ZnO (ZnO:(Al, F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural, electrical and optical properties of the deposited films are sensitive to the F doping content.The X-ray analysis shows that the films are c-axis orientated along the (002) plane with the grain size ranging from 9 nm to 13 nm.Micrographs obtained by the scanning electron microscope (SEM) show a uniform surface.The best films obtained have a resistivity of 2.16× 10-3Ω · cm, while the high optical transmission is 92.0% at the F content of 2.46 wt.%.