Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

• 来源期刊: 中国物理C(英文版)
• 学科: 工学
• 年，卷（期）: 2011,（7）
• 页码范围: 635-637
• 页数: 3页
• 分类号: TL814
• 语种: 英文
• DOI: 10.1088/1674-1137/35/7/007

摘要

The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.