A Novel Model of the H Radical in Hot-Filament Chemical Vapor Deposition

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2011,（2）
• 页码范围: 216-219
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/28/2/028101

摘要

Amorphous hydrogenated and crystalline silicon thin films were prepared by hot-filament chemical vapor deposition.A structural transformation from amorphous phase to crystalline phase by increasing the filament temperature Tfil from 1600°C to 1650°C was observed.This phenomenon may result from the associated abundance of H radicals participating in the growth of the Silms.A probability distribution model of the H radical is proposed to elucidate this phenomenon.According to this model, the phase transition is due to a distinct difference in the probability distribution of the H radicals, which seems to be dependent upon Tfil.