Electrical, Structural and Interfacial Characterization of HfO2 Films on Si Substrates

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2011,（8）
• 页码范围: 240-242
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/0256-307X/28/8/086803

摘要

Hafnium oxide films are deposited on Si(100) substrates by means of rf magnetron sputtering.The interfacial structure is studied using high-resolution transmission electron microscopy(HRTEM) and x-ray photoelectron spectroscopy(XPS), and the electrical properties of the Au/ HfO2/Si stack are analyzed by frequency-dependent capacitance-voltage(C-V-f) measurements.The amorphous interfacial layer between HfO2 and the Si substrate is observed by the HRTEM method.From the results of XPS, the interfacial layer comprises hafnium silicate and silicon oxide.For C-V-f measurements, the C-V plots show a peak at a low frequency and the change in frequency has effects on the intensity of the peak.As expected, rapid thermal annealing can passivate the interface states of the HfO2/Si stack.