Optical characterization of antimony-based bismuth-doped thin films with different annealing temperatures

• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2011,（11）
• 页码范围: 67-70
• 页数: 4页
• 语种: 英文
• DOI: 10.3788/COL201109.102101

摘要

Antimony-b ased bismuth-doped thin film,a new kind of super-resolution mask layer,is prepared by magnetron sputtering.The structures and optical constants of the thin films before and after annealing are examined in detail.The as-deposited film is mainly in an amorphous state.After annealing at 170-370℃,it is converted to the rhombohedral-type of structure.The extent of crystallization increased with the annealing temperature.When the thin film is annealed,its refractive index decreased in the most visible region,whereas the extinction coefficient and reflectivity are markedly increased.The results indicate that the optical parameters of the film strongly depend on its microstructure and the bonding of the atoms.As demand for ultrahigh-density information storage continues to grow the recording mark size in optical memory is reduced to the nanometer scale [1- 4].Exceeding the optical diffraction limit with traditional optical storage technology has become a challenge[5-6].