Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2011,（8）
• 页码范围: 75-78
• 页数: 4页
• 语种: 英文
• DOI: 10.3788/COL201109.082301

摘要

Low-voltage silicon(Si)-based light-emitting diode(LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor(CMOS) technology.The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration.