Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

• 作者: 冯志红 刘新宇 叶甜春 敦少博 李佳 潘洪亮 郭建楠 金智 麻芃
• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2011,（12）
• 页码范围: 231-234
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/28/12/127202

摘要

Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2O3 as the top-gate dielectric.The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate.The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found.For the intrinsic characteristic of this particular channel material,the devices cannot be switched off.The cut-off frequencies of these graphene field-effect transistors,which have a gate length of l μm,are larger than 800 MHz.The largest one can reach 1.24 GHz.There are greater than 95％ active devices that can be successfully applied.We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors,which paves the way for high-performance graphene devices and circuits.