Peculiar Transmission Characteristics of the Large Gap Semi-Insulating GaAs Photoconductive Switch

• 作者: 施卫 马湘蓉
• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2011,（12）
• 页码范围: 132-135
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/28/12/124201

摘要

Unique experimental phenomena are discovered in a large gap semiinsulating(SI)GaAs photoconductive semiconductor switch(PCSS)and the peculiar transmission characteristics are exhibited in the experiment.The transmission characteristics for the large gap SI-GaAs PCSS are entirely different from the commonly designed PCSS.By analyzing the differences of the transmission characteristics between the common and the large gap SI-GaAs PCSS,a detailed statistical analysis and theoretical explanations are expounded.The large gap SI-GaAs PCSS works in the overvoltage relaxation limit space charge accumulation(LSA)mode when the conditions of 5 × 104 s·cm-3 ≤ no/f ≤ 3 × 105 s.cm-3 and noL ≥ 1013 cm-2 must be met in the switch,with no being carrier concentration and f the frequency.The large gap SI-GaAs PCSS we developed has not shown the nonlinear (lock-in)behavior at high bias voltage,so the withstand voltage and service life for PCSS are improved.