Temperature and Composition Dependence of GaNxAs1-x(0＜x≤0.05)before and after Annealing

• 作者: 唐春晓 李娜娜 赵传阵 魏通
• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2011,（12）
• 页码范围: 263-266
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/28/12/127801

摘要

The parameters in the band-anticrossing model for GaNxAs1-x(0＜x≤0.05)are obtained considering the effect of temperature and composition.It is found that the effect of composition on the N levels in the band-anticrossing model is weak.The temperature dependence of the N levels and the temperature dependence of the band gap energy of GaNAs are weaker than that of GaAs.In addition,the reason for a spectral blueshift and the effect of annealing on the parameters in the band-anticrossing model are also discussed.