Suppression of the Drift Field in the p-Type Quasineutral Region of a Semiconductor p-n Junction

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（9）
• 页码范围: 151-154
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/9/097202

摘要

An improved analytical model of the drift field suppressed by the Dember field due to ambipolar diffusion in the p-type quasineutral region (p-QNR) of a forward silicon p-n junction at low injection levels is presented with a good fit to the numerical simulation results.Considering ambipolar transport of both carriers,the diode current in the p-QNR is found to consist of a minority-electron diffusion-current component and majority-hole driftand diffusion-current components,and the Dember field plays a dominant role in balancing all the components mentioned above to keep the current constant.The analytical model is beneficial to completely understand ambipolar current transport mechanisms in semiconductor p-n junction devices.