AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Laver Deposition

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（2）
• 页码范围: 221-224
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/2/028501

摘要

We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/Al2O3 lamination dielectric deposited by atomic layer deposition (ALD) as the gate insulator.A large gate voltage swing (GVS) of 3.96 V and a high breakdown voltage of-150 V for the MIS-HEMT were obtained.We present the gate leakage current mechanisms and analyze the reason for the reduction of the leakage current.Compared with traditional HEMTs,the maximum drain current is improved to 960mA/mm,indicating that NbAlO layers could reduce the surface-related depletion of the channel layer and increase the sheet carrier concentration.In addition,the maximum oscillation frequency of 38.8 GHz shows that the NbAlO high-k dielectric can be considered as a potential gate oxide comparable with other dielectric insulators.