Temperature Dependence of the Raman Intensity and the Bandwidth Close to the Order-Disorder Phase Transition in NaNO<sub>3</sub>

• 作者: Hamit Yurtseven Sukran Aslan
• 来源期刊: 光学与光子学期刊(英文)
• 学科: 化学
• 关键词: RAMAN INTENSITY BANDWIDTH NaNO3
• 年，卷（期）: 2012,（3）
• 页码范围: 249-253
• 页数: 5页
• 分类号: O6

摘要

We analyze the temperature dependence of the Raman intensity using the experimental data according to a power-law formula close to the order-disorder transition (Tc = 549 K) in NaNO 3. From this analysis, we extract the value of β = 0.26 as the critical exponent for the order parameter, which indicates a tricritical phase transition in this crystalline system. Using the temperature dependence of the order parameter, the Raman bandwidth is calculated at various temperatures in NaNO3. Our calculated bandwidths describe adequately the observed behaviour of the order-disorder transition in this crystal.