A model for thermal annealing on forming In—N clusters in InGaNP

• 来源期刊: 中国科学:物理学 力学 天文学（英文版）
• 年，卷（期）: 2012,（5）
• 页码范围: 798-801
• 页数: 4页
• 语种: 英文
• DOI: 10.1007/s11433-012-4711-z

摘要

We develop a model for the effect of thermal annealing on forming In—N clusters in GaInNP according to thermodynamics.The average energy variation for forming an In—N bond in the model is estimated according to the theoretical calculation.Using the model,the added number of In—N bonds per mol of InGaNP,the added number of nearest-neighbor In atoms per N atom and the average number of nearest-neighbor In atoms per N atom after annealing are calculated.The different function of In—N clusters in InGaNP and InGaN is also discussed,which is due to the different environments around the In—N clusters.