The Structural and Electrical Properties of Al/Pb(Zr0.52Ti0.48)O3/Al2O3/Si with an Al2O3 Layer Prepared by using the Molecular Atomic Deposition Method

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（12）
• 页码范围: 243-245
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/12/128501

摘要

The structural and electrical properties of a metal-ferroelectric-insulator-semiconductor (MFIS) structure with an Al2O3 layer prepared by using the molecular atomic deposition method and Pb(Zro.52 Tio.48)O3 (PZT) deposited by the radio frequency magnetron sputtering method are investigated.PZT exhibits a very smooth surface and (110) orientation of the perovskite phase.The MFIS structure shows well-behaved clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization under a sweep voltage up to ±40 V.Memory windows of 1.9 V and 18.14 V in conjunction with leakage current density of 2.42 × 10-7 A/cm2 and 8.28 × 10-7 A/cm2 are obtained under sweep voltages of ±5 V and ±20 V,respectively.