GISAXS and ATR-FTIR Studies on Stress-Induced Microstructure Evolution of a-Si:H under H2 Plasma Exposure

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（10）
• 页码范围: 167-170
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/10/106801

摘要

Microstructure evolution in the surface layer of hydrogenated amorphous silicon (a-Si:H) film exposed to H2 plasma is investigated using grazing-incidence small-angle x-ray scattering and attenuated total reflection-Fourier transform infrared spectroscopy.Molecular hydrogen generated in the microvoids through H-abstraction reaction drives the evolution of the void shape from spherical to ellipsoidal as well as increases the average void volume and total void volume fraction.High-pressure H2 in the microvoid promotes the formation of a strained structure with high compressive stress within the a-Si:H film,which favours the generation of the SiHn complex in the subsurface layer of the a-Si:H film by H insertion into strained Si-Si bonds.