Theoretical analyses on improved beam properties of GaSb-based 2.X-μm quantum-well diode lasers with no degradation in laser parameters

• 来源期刊: 中国物理B（英文版）
• 关键词: broad-waveguide structure asymmetric heterostructure beam divergence optical confinement factor
• 年，卷（期）: 2012,（8）
• 页码范围: 258-263
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/21/8/084208

摘要

An asymmetric laser heterostructure is developed to improve the beam properties of GaSb-based diode lasers with no degradation in laser parameters.Employing the semivectorial finite difference method,the dependences of beam divergence and optical confinement factor on waveguide width and refractive index step are investigated theoretically.After carefully design,a particular asymmetric laser structure is proposed.Its beam divergence in the fast axis is reduced from 61° to 34° compared with that of the broad-waveguide structure.The optical confinement factor is approximately equal to 0.0362 and comparable to that of the conventional broad-waveguide structure.