The Growth of Semi-Polar ZnO (10(1)1) on Si (111) Substrates Using a Methanol Oxidant by Metalorganic Chemical Vapor Deposition

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（1）
• 页码范围: 264-267
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/1/018101

摘要

Semi-polar ZnO (l0(1)1) epitaxial films are demonstrated using a methanol oxidant by metalorganic chemical vapor deposition on Si (111) substrates at 500℃.X-ray (O) scanning indicates that there are six kinds of in-plane domain growths,with the ZnO [10(1)2] parallel to the Si (11(2)〉 direction families.The crystallographic orientation of ZnO is supposed to be caused by surface passivation.The methanol,as a polar molecule,may be adsorbed on the Si (111) surface to form a passivation layer,which inhibits the (0001) ZnO plane deposition on the substrate surface,and as a result the ZnO (10(1)1) plane becomes preferred.The optical properties,examined by a roomtemperature photoluminescence spectrum,exhibit a strong near-band-edge emission peak at 379nm,indicating that the (10(1)1) ZnO film has good crystal quality.These results are significant for research into and for the applications of semi-polar ZnO films.