Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

• 来源期刊: 科学通报(英文版)
• 学科: 工学
• 年，卷（期）: 2012,（23）
• 页码范围: 3040-3044
• 页数: 5页
• 分类号: TB383.2
• 语种: 中文

摘要

Large-area single-or multilayer graphene of high quality is synthesized on Ni films by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at a relatively low temperature (650℃).In the deposition process,a trace amount of CH4 gas (2-8 sccm (sccm denotes standard cubic centimeter per minute at STP)) is introduced into the PECVD chamber and only a short deposition time (30-60 s) is used.Single-or multilayer graphene is obtained because carbon atoms from the discharging CH4 diffuse into the Ni film and then segregate out at its surface.The layer number of the obtained graphene increases when the deposition time or CH4 gas flow rate is increased.This investigation shows that PECVD is a simple,low-cost,and effective technique to synthesize large-area single-or multilayer graphene,which has potential for application as electronic devices.