Low Power and High Sensitivity MOSFET-Based Pressure Sensor

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（8）
• 页码范围: 276-278
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/8/088501

摘要

Based on the metal-oxide-semiconductor field effect transistor (MOSFET) stress sensitive phenomenon,a low power MOSFET pressure sensor is proposed.Compared with the traditional piezoresistive pressure sensor,the present pressure sensor displays high performances on sensitivity and power consumption.The sensitivity of the MOSFET sensor is raised by 87％,meanwhile the power consumption is decreased by 20％.