Unipolar Resistive Switching Effects Based on Al/ZnO/P++-Si Diodes for Nonvolatile Memory Applications

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（8）
• 页码范围: 205-208
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/8/087201

摘要

Al/ZnO/P++-Si diodes exhibit typical unipolar resistive switching behaviors.The electroforming-free characteristics are observed after annealing the ZnO thin film at 400℃ in air.The ON/OFF ratios of the resistance are in the range of 104-105 at a very low operation voltage of 0.1 V,and the devices show good endurance characteristics of over 400 cycles with negligible reduction.Finally,the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results.These results indicate that A1/ZnO/P++-Si devices have potential applications in nonvolatile memory devices.