Growth-induced Stacking Faults of ZnO Nanorods Probed by Spatial Resolved Cathodoluminescence

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（7）
• 页码范围: 261-264
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/7/077803

摘要

Low density ZnO nanorods are grown by modified chemical vapor deposition on silicon substrates using gold as a catalyst.We use high resolution photoiuminescence spectroscopy to gain the optical properties of these nanorods in large scale.The as-grown samples show sharp near-band-gap luminescence with a full width at half maximum of bound exciton peaks at about 300μeV,and the ratio of ultraviolet/yellow luminescence larger than 100.Highly spatial and spectral resolved scanning electron microscope-cathodoluminescence is performed to excite the ZnO nanorods in single rods or different positions of single rods with the vapour-solid grovth mechanism.The bottom of the nanorod has a 3.31-eV luminescence,which indicates that basal plane stacking faults are related to the defects that are created at the first stage of growth due to the misfit between ZnO and Si.