A New Method to Calculate the Rashba Spin Splitting in Ⅲ-Nitride Heterostructures

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2012,（12）
• 页码范围: 172-176
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/0256-307X/29/12/127104

摘要

By constructing proper basis functions,the 8 × 8 Kane Hamiltonian is transformed to two separate 4 × 4 Hamiltonians,and the Schrodinger equation for conduction-band envelope functions can be obtained by eliminating the valence band components of the envelope functions.Then we decouple the up-spin and down-spin states and derive the expression for the Rashba coefficient and single-particle energy,considering the spin-orbit coupling and the nonparabolicity corrections.Finally,we calculate the Rashba spin splitting for Alx Ga1-xN/GaN heterostructures by using the variational method.The Rashba spin splitting calculated here is of the same order of magnitude as in other Ⅲ-Ⅴ materials,showing that the internal electric field caused by the high concentration of the 2DEG is crucial for considerable Rashba spin splitting