The Effect of the MeV Si-Ion Irradiation on the Photoluminescence of Silicon Nanocrystals

• 作者: Alejandra López-Suárez
• 来源期刊: 凝固态物理国际期刊(英文)
• 学科: 物理学
• 关键词: SILICON NITRIDE SILICON NANOCRYSTALS PHOTOLUMINESCENCE RBS ERDA
• 年，卷（期）: 2013,（2）
• 页码范围: 119-124
• 页数: 6页
• 分类号: O48

摘要

Silicon nanocrystals embedded in silicon nitride films were irradiated with Si-ions at 8 MeV in order to modify their optical response. The samples were characterized by means of Rutherford Backscattering Spectrometry, Elastic Recoil Detection Analysis, High-Resolution Transmission Electronic Microscopy and Photoluminescence analysis. It was found a blue-shift in the photoluminescence emission from the as-grown films after they were irradiated with high energetic silicon ions. According to the quantum confinement theory, this fact is related to a decrease in size of the silicon nanocrystals, which means that a higher silicon fluence irradiation is related with a diminishing in silicon nanocrystal size.