A novel composite UV/blue photodetector based on CMOS technology: design and simulation

• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2013,（6）
• 页码范围: 414-417
• 页数: 4页
• 语种: 英文
• DOI: 10.1007/s11801-013-3149-5

摘要

A novel composite ultraviolet (UV)/blue photodetector is proposed in this paper.Lateral ring-shaped PN junction is used to separate photogenerated carriers and inject the non-equilibrium excess carriers to the bulk,changing the bulk potential and shifting the threshold voltage of the metal-oxide-semiconductor field-effect transistor (MOSFET) as well as the drain current.Numerical simulation is carried out,and the simulation results show that the composite photodetector has the enhanced responsivity for UV/blue spectrum.It exhibits very high sensitivity to weak and especially ultra-weak light.A responsivity of 7000 A/W is obtained when the photodetector is illuminated under incident optical power of 0.01 laW.As a result,this proposed combined photodetector has great potential for UV/blue and ultra-weak light applications.