A Low Specific on-Resistance SOI Trench MOSFET with a Non-Depleted Embedded p-Island

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2013,（7）
• 页码范围: 247-250
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/30/7/078501

摘要

A novel silicon-on-insulator (SOI) trench metal-oxide-semiconductor field effect transistor (MOSFET) with a reduced specific on-resistance (Ron,sp) is presented.It features an oxide-filled trench and a non-depleted embedded p-type island (p-SOI).The oxide trench folds the drift region into a U-shape,resulting in a reduction in cell pitch and Ron,sp.The non-depleted p-island is employed to further reduce Ron,sp by increasing the optimized doping concentration of the drift region without deteriorating the breakdown voltage (BV).The simulation results show that the p-SOI decreases the Ron,sp to 10.2mΩ.cm2 from 17.4mΩ.cm2 of the conventional SOI MOSFET at the same BV.