Effect of Deposition Temperature on the FTIR Absorbance of Zinc Oxide Thin Films Produced by MOCVD

• 作者: C. Iroegbu G. A. Alozie K. B. Okeoma U. S. Mbamara
• 来源期刊: 现代物理(英文)
• 学科: 医学
• 关键词: ZnO THIN Films MOCVD IMPURITIES FTIR ABSORBANCE Applications
• 年，卷（期）: 2013,（3）
• 页码范围: 349-353
• 页数: 5页
• 分类号: R73

摘要

Metalorganic chemical vapour deposition (MOCVD) method was used to deposit zinc oxide thin films on soda-lime glass substrates at temperatures of 330°C, 360°C, 390°C and 420°C, using zinc acetate as the precursor. Compressed air was used as the carrier gas at a flow rate of 2.5 dm3 per minute. Each deposition was carried out for two hours under atmospheric pressure. FTIR measurements were subsequently made on the produced thin films to determine their struc ture and trend with deposition temperatures. The measurements showed the presence of lingering functional groups of organic, oxide and nitride origin, which prominently moderated the natural vibrational modes of the material within their respective affiliate wavenumbers, as well as three slight but evident trends in absorbance peaks, cut-off wave length, and the existence of the functional groups with temperature. The produced materials are expected to be useful for enhanced solar cells, triggering sensor devices, p-doped zinc oxide, etc.