High Deep-Ultraviolet Quantum Efficiency GaN P-I-N Photodetectors with Thin P-GaN Contact Layer

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2013,（1）
• 页码范围: 169-171
• 页数: 3页
• 语种: 英文
• DOI: 10.1088/0256-307X/30/1/017302

摘要

GaN-based semiconductors are very attractive for fabricating highly sensitive ultraviolet (UV) photodetectors (PDs) owing to their wide direct bandgap,excellent physical and chemical stability,and increasingly improved material growth/processing technologies.These PDs have wide applications in the fields of flame detection,environmental monitoring,chemical/biological agent sensing,and UV astronomy.[1] Over the last few years,various types of GaN-based PDs have been demonstrated with promising performance including photoconductors,[2]metal-semiconductor-metal PDs,[3,4] Schottky barrier PDs,[5,6] and p i-n PDs.[7-9] Among these structures,p-i-n PDs draw particular interest for their advantages of low dark current,relatively high speed,and high stability.