Effect of the Cladding Layer Cavity on the Efficiency of 650 nm Resonant Cavity Light Emitting Diodes

• 作者: Jiachun Li Jianjun Li Tao Liu Xuan Ya
• 来源期刊: 光学与光子学期刊(英文)
• 学科: 工学
• 关键词: 650 NM RCLED MOCVD DBR
• 年，卷（期）: 2013,（2）
• 页码范围: 284-287
• 页数: 4页
• 分类号: TN3

摘要

High efficiency 650 nm resonant cavity light emitting diodes (RCLEDs) with a cladding layer cavity are reported. The epitaxial structure is grown with a metal-organic chemical vapor deposition (MOCVD) system. Al 0.5Ga 0.5 As/Al As is used for the distributed Bragg reflectors (DBRs), and GaInP/AlGaInP multiple-quantum wells for the active region. Two RCLED samples have been fabricated, one with a cladding layer cavity and the other without. Experimental results show that the cladding layer cavity can improve the internal quantum efficiency effectively, so that an external quantum efficiency of 7.4% at 20 mA is reached. Meanwhile, the sample with cladding layer cavity also shows a spectral stability as the injected current changing from 20 mA to 100 mA.