Morphology of CIGS thin films deposited by single-stage process and three-stage process at low temperature

• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2013,（6）
• 页码范围: 449-453
• 页数: 5页
• 语种: 英文
• DOI: 10.1007/s11801-013-3130-3

摘要

Cu(In,Ga)Se2 (CIGS) thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment.The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy (SEM).The orientation of CIGS thin films is identified by X-ray diffraction (XRD) and Raman spectrum,respectively.Through analyzing the film-forming mechanisms of two preparation processes,we consider the cause of such differences is that the films deposited by three-stage process at low temperature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones.The three-stage process at low temperature results in the CIGS thin films with the (220)/(204) preferred orientation,and the ordered vacancy compound (OVC) layer is formed on the surface of the film.This study has great significance to large-scale industrial production.