AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer

• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2013,（10）
• 页码范围: 83-85
• 页数: 3页
• 语种: 英文
• DOI: 10.3788/COL201311.102304

摘要

Unintentionally doped AlGaN thin films are grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor deposition,and low-temperature AlN is deposited onto sapphire substrate used as a buffer layer.AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology.The dark current of the AlGaN photodetectors is 5.61× 10-9 A at 2-V applied bias and the peak response occurrs at 294 nm.