The conformational shifts of the voltage sensing domains between NavRh and NavAb

• 来源期刊: 细胞研究（英文版）
• 年，卷（期）: 2013,（3）
• 页码范围: 444-447
• 页数: 4页
• 语种: 英文
• DOI: 10.1038/cr.2012.158

摘要

Dear Editor,Voltage sensing domains (VSDs),also known as voltage sensors,are electromechanical coupling devices that convert the membrane potential changes to the activation of voltage-gated ion channels.VSDs comprise four transmembrane segments (S1-S4),among which the S4 segment contains repeating positively charged residues (gating charges) that are exposed from the intracellular side to the extracellular milieus in response to membrane depolarization.A charge transfer center (CTC) that consists of two negatively charged residues and a conserved aromatic residue on the S2 segment was identified [1].The two negatively charged amino acids,namely Anl and An2,may sequentially interact with the gating charges to lower the energy barrier during voltage-dependent charge transfer (Supplementary information,Figure S1)[2].