Stable field emission of ion-sputtering-induced Si nanocone arrays

• 来源期刊: 中国光学快报（英文版）
• 年，卷（期）: 2013,（11）
• 页码范围: 58-61
• 页数: 4页
• 语种: 英文
• DOI: 10.3788/COL201311.111601.

摘要

Silicon nanocone arrays with metal silicide (Fe and Cr)-enriched apexes are fabricated on Si (100) substrate by the Ar+ ion bombardment method.The nanocone arrays show excellent field emission properties.A high current density (J) of ～0.33 mA/cm2 under a field of ～3 V/μm,a very low turn-on field of ～1.4 V/μm,and a very large enhancement factor of ～9466 are also obtained.The emission J of Si nanocone arrays remains extremely stable for long periods of time (24 h).