An Analytical Model of SiGe Heterojunction Bipolar Transistors on SOI Substrate for Large Current Situations

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2013,（2）
• 页码范围: 239-242
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/30/2/028502

摘要

Recently,silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) have been demonstrated with transit frequencies above 350GHz at 300 K and above 500 GHz at 4.5 K,[1] and the technology of SiGe BiCMOS has turned into a cost-efficient solution for high-frequency and high-volume applications.Future wireless communication electronics,such as radars and millimeter-wave imaging,demand even higher speed in combination with low-power consumption.For silicon-on-insulator (SOI),as a reduction in device parasitic,a built-in higher operating voltage capability,a reduction in signal crosstalk,improved soft error immunity,and an elimination of latchup,[2] the SOI CMOS technology has matured over the past 15 years to become mainstream.