Selective epitaxial growth of Ge nanodots with ultra-thin porous alumina membrane
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摘要:
We demonstrate that ultra-thin porous alumina membrane (PAM) is suitable for controlling of both size and site of Ge nanodots on Si substrates.Ge nanodots are grown on Si substrates with PAM as a template at different temperatures with molecular beam epitaxy (MBE) method.Ordered Ge nanodot arrays with uniform size and high density are obtained at 400 and 500 ℃.Spatial frequency spectrums transformed from scanning electron microscopy images through fast Fourier transform are utilized to analyze surface morphologies of Ge nanodots.The long-range well-ordered Ge nanodot arrays form a duplication of PAM at 400 ℃ while the hexagonal packed Ge nanodot arrays are complementary with PAM at 500 ℃.