The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2013,（6）
• 页码范围: 220-223
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/30/6/068402

摘要

Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated,and an InGaN/GaN MQWs solar cell device is fabricated.Photo response measurement of the solar cell devices shows that the fill factor FF=49.4％,open circuit voltage VOC =0.32 V,and short circuit current JSC =0.07 mA/cm2,under AM 1.5 G illumination.In order to analyze the influence of material quality on the performance of solar cells,XRD,SEM and Raman scattering experiments are carried out.It is found that insertion of a proper top AIN layer can effectively improve the material quality,and therefore enhance the photovoltaic performance of the fabricated device.