指数掺杂反射式GaAlAs和GaAs光电阴极比较研究

• 作者: 常本康* 张益军 徐源 赵静 郝广辉 金睦淳 陈鑫龙
• 来源期刊: 物理学报
• 关键词: 指数掺杂 反射式 光电阴极 量子效率
• 年，卷（期）: 2013,（3）
• 页码范围: 348-353
• 语种: 中文
• DOI: 10.7498/aps.62.037303

摘要

A reflection-mode GaAlAs photocathode and a reflection-mode GaAs photocathode using exponential-doping technique are pre-pared by metal organic chemical vapor deposition, and the Al content of GaAlAs emission layer is 0.63. The two photocathodes are activated in an ultra-high vacuum system, and the spectral response curves are measured after activation. The quantum efficiency formula for exponential-doping reflection-mode photocathode is used to fit the experimental curves of the two photocathodes respec-tively, and the effects of some performance parameters on photoemission are analyzed, such as electron diffusion and drift length, back-interface recombination velocity, surface electron escape probability, etc. The results show that the Al content of the GaAlAs photocathode plays a bad role in the photoemission compared with that the GaAs photocathode, but it solves the problem that the GaAs photocathode cannot be well used in the area of detecting the narrow wavelength light due to the broad spectral response. The reflection-mode GaAlAs photocathode prepared is responsive to the blue and green light.

作者信息

序号	姓名	单位	发文数	被引次数	H指数	G指数
1	张益军	南京理工大学电子工程与光电技术学院	28	105	6.0	8.0
2	赵静	南京理工大学电子工程与光电技术学院	11	53	5.0	7.0
3	徐源	南京理工大学电子工程与光电技术学院	11	23	3.0	4.0
4	郝广辉	南京理工大学电子工程与光电技术学院	2	12	2.0	2.0
5	常本康*	南京理工大学电子工程与光电技术学院	2	12	2.0	2.0
6	陈鑫龙	南京理工大学电子工程与光电技术学院	2	12	2.0	2.0
7	金睦淳	南京理工大学电子工程与光电技术学院	2	12	2.0	2.0