Improved Performance of Phthalocyanine Derivative Field-Effect Transistors by Inserting a Para-Quarterphenyl as the Inducing Layer

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2014,（5）
• 页码范围: 183-186
• 页数: 4页
• 语种: 中文
• DOI: 10.1088/0256-307X/31/5/058501

摘要

We investigate the phthalocyanine derivative organic field-effect transistors (OFETs) using a novel para-quaterphenyl (p-4p) as the inducing layer.Compared to the devices without the p-4p inducing layer,the performances of p-type (copper phthalocyanine) and n-type (fluorinated copper phthalocyanine) OFETs with optimized thickness of p-4p thin films are greatly enhanced.Both the field-effect mobility and the on/off ratio of the two-type devices are improved by one order of magnitude compared to those of the control devices.This re-markable improvement is attributed to the introduction of p-4p,which can form a highly oriented and continuous phthalocyanine derivative film with the molecular π-π stack direction parallel to the substrate.