Electrically Pumped Ultraviolet Random Lasing from p-ZnO:As Based on p-ZnO/N-GaN Heterojunction

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2014,（5）
• 页码范围: 179-182
• 页数: 4页
• 语种: 中文
• DOI: 10.1088/0256-307X/31/5/058101

摘要

p-ZnO:As is prepared by the GaAs interlayer doping method.The potential applications of p-ZnO:As are eval-uated by applying it into the construction of a p-ZnO/n-GaN heterojunction,though its hall,electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of ～1017 cm-3 and a good optical quality.Ultraviolet random lasing is detected from the studied device under forward bias.Specific lasing modes are confirmed to originate from p-ZnO:As by further introducing the p-ZnO/MgO/n-GaN het-erostructure.The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO:As fabricated by using our methods.