Role of Oxygen Vacancy Arrangement on the Formation of a Conductive Filament in a ZnO Thin Film

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2014,（5）
• 页码范围: 157-160
• 页数: 4页
• 语种: 中文
• DOI: 10.1088/0256-307X/31/5/057307

摘要

We perform first-principles calculations for ZnO thin films with oxygen vacancy defects.The densities of states,partial atomic densities of states,charge density differences and atomic populations are presented.We show that the SET process,i.e.,from a high resistive state to a low resistive state,is attributable to the aggregation and regular arrangement of the oxygen vacancies,which causes the formation of conductive filaments and leads to the low resistive state of the system.