Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors

• 来源期刊: 中国物理B（英文版）
• 关键词: silicon carbide trenched-and-implanted vertical junction field-effect transistor normally-on device normally-off device
• 年，卷（期）: 2014,（7）
• 页码范围: 653-658
• 页数: 6页
• 语种: 中文
• DOI: 10.1088/1674-1056/23/7/077201