Fabrication of CdS/SnS Heterojunction for Photovoltaic Application

• 作者: Haifang Zhou Hongjie Jia Hongnan Li Jie Zhang Shuying Cheng Weihui Huang
• 来源期刊: 凝固态物理国际期刊(英文)
• 学科: 物理学
• 关键词: SNS Films HETEROJUNCTION Thermally Vacuum-Evaporation I-V CURVES
• 年，卷（期）: 2015,（1）
• 页码范围: 10-17
• 页数: 8页
• 分类号: O48

摘要

SnS/CdS heterojunction is a promising system for photovoltaic application. SnS thin films were thermally evaporated onto CdS/ITO coated glass substrates. The structure of the device was glass/ ITO/CdS/SnS/In/Ag and I-V curves of the fabricated devices were measured under dark and illuminated conditions, respectively. We discussed the relationship of the thickness and annealing temperature of CdS buffer layers with the performance of SnS/CdS heterojunctions. The optimum thickness and annealing temperature of the CdS buffer layers were 50 nm and 350°C, respectively. The best device had a conversion efficiency of 0.0025%.