Preparation of CuO-Ta<SUB>2</SUB>O<SUB>5</SUB>Composites Using a Simple Co-Sputtering Method

• 作者: Kenta Miura Osamu Hanaizumi Takumi Osawa Yuya Yokota Zobaer Hossain
• 来源期刊: 材料科学与化学工程(英文)
• 学科: 工学
• 关键词: TA2O5 CUO Co-Sputtering X-Ray Diffraction Photoluminescence
• 年，卷（期）: 2015,（9）
• 页码范围: 47-51
• 页数: 5页
• 分类号: TB3

摘要

We prepared CuO-Ta2O5 composite films using our simple co-sputtering method for the first time. Four specimens were prepared from an as-deposited CuO-Ta2O5 sample by cutting it using a diamond- wire saw, and the specimens were subsequently annealed at 600°C - 900°C. The X-ray diffraction and photoluminescence (PL) of the annealed specimens were evaluated. The CuO-Ta2O5 film annealed at 600°C seemed to be primarily amorphous phase, and a sharp PL peak at a wavelength of 450 nm, due to the existence of Cu2+, was observed from the film. In contrast, the CuO-Ta2O5 films annealed at 700°C, 800°C, and 900°C seemed to be tetragonal CuTa2O6 phases. We expect that good-quality CuTa2O6 films can be obtained using our very simple co-sputtering method and subsequent annealing above 900°C. Such CuTa2O6 films can be used in chemisorptions conductometric gas sensors.