Defect density engineering for better graphene performance

• 来源期刊: 中国科学:化学（英文版）
• 年，卷（期）: 2015,（3）
• 页码范围: 433
• 页数: 1页
• 语种: 中文
• DOI: 10.1007/s11426-015-5339-4

摘要

Graphenes are emerging electrode materials used in many technologies such as electronics,sensors,as well as energy conversion and storage.The pristine graphenes,due to the elimination of density of states (DOS) at/near the Dirac point (Fermi level),have limited activities for charge transfer and storage.Fortunately,introduction of structural defects and disorders in graphenes can increase the DOS near the Fermi level by forming mid-gap and/or defect states,similar to that in silicon and other semiconducting materials.