Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs

• 来源期刊: 中国物理B（英文版）
• 关键词: DG-MOSFET effective oxide thickness non-equilibrium Green’s function oxide thickness gate dielectric permittivity
• 年，卷（期）: 2015,（4）
• 页码范围: 047302-1-047302-7
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/4/047302

摘要

Impacts of effective oxide thickness on a symmetric double-gate MOSFET with 9-nm gate length are studied, using full quantum simulation. The simulations are based on a self-consistent solution of the two-dimensional (2D) Poisson equation and the Schr ¨odinger equation within the non-equilibrium Green’s function formalism. Oxide thickness and gate dielectric are investigated in terms of drain current, on-off current ratio, off current, sub-threshold swing, drain induced barrier lowering, transconductance, drain conductance, and voltage. Simulation results illustrate that we can improve the device performance by proper selection of the effective oxide thickness.