Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt

• 作者: 刘欣 唐欣月 张喜田 武立立 温静 潘思明 高红
• 来源期刊: 中国物理B（英文版）
• 关键词: In2O3(ZnO)m superlattice electrical properties
• 年，卷（期）: 2015,（2）
• 页码范围: 027305-1-027305-5
• 页数: 1页
• 语种: 英文
• DOI: 10.1088/1674-1056/24/2/027305

摘要

One-dimensional (1D) In2O3(ZnO)m superlattice nanobelts are synthesized by chemical vapor deposition method. The formation of In2O3(ZnO)m superlattice is verified by the high-resolution transmission electron microscopy images. The typical zigzag boundaries could be clearly observed. An additional peak at 614 cm?1 is found in the Raman spec-trum, which may correspond to the superlattice structure. The study about the electrical transport properties reveals that the In2O3(ZnO)m nanobelts exhibit peculiar nonlinear I–V characteristics even under the Ohmic contact measurement con-dition, which are different from the Ohmic behaviors of the In-doped ZnO nanobelts. The photoelectrical measurements show the differences in photocurrent property between them, and their transport mechanisms are also discussed.